Khandker Akif Aabrar

Phone 574-239-5978
Email kaabrar3@gatech.edu

LinkedIn www.linkedin.com/in/khandker-akif-aabrar-61a610b7/

Research Interests

His current research focuses on the characterization and virtual source modeling of transistors for cryogenic applications.

Doctoral Student

Bio

Khandker Akif Aabrar received his Bachelor’s degree in Electrical & Electronic Engineering from the Bangladesh University of Engineering and Technology (BUET), Dhaka. During his undergrad studies, he worked on the synthesis and magnetic characterization of BFO nanoparticle. He joined the University of Notre Dame, Indiana as a graduate student in August 2019, and is currently working under Professor Suman Datta for his PhD.

Selected Publications

[1] Aabrar, K.A.*, Sharadindu Gopal Kirtania*, Sunbin Deng, Gihun Choe, Asif Khan, Shimeng Yu, Suman Datta “Improved Reliability and Enhanced Performance in BEOL Compatible W-doped In2O3 Dual-Gate Transistor”, IEEE International Electron Devices Meeting (IEDM) 2023
[2] Aabrar, K.A, James Read, S.G. Kirtania, Sergei Stepanoff, Douglas E. Wolfe, Shimeng Yu, S. Datta “Total Ionizing Dose Effect in Tri-gate Silicon Ferroelectric Transistor Memory”, IEEE International Electron Devices Meeting (IEDM) 2022
[3] Aabrar, K. A.*, Kirtania, S.G., Lu, A., Khanna, A., Chakraborty,W., M. Jose, M., Yu, S., S. Datta. “A thousand state Superlattice(SL) FeFET Analog Weight Cell.” Symposium on VLSI Technology2022
[4] Aabrar, K. A., Kirtania, S. G., Liang, F. X., Gomez, J., San Jose, M., Luo, Y., … & Datta, S. (2022). BEOL-Compatible Superlattice FEFET Analog Synapse with Improved Linearity and Symmetry of Weight Update. IEEE Transactions on Electron Devices.
[5] Chakraborty,W.*, Aabrar, K. A.*, J. Gomez, R. Saligram, A. Raychowdhury, P. Fay, and S. Datta. “Cryogenic RF CMOS on 22nm FDSOI Platform with Record f T= 495GHz and f MAX= 497GHz.” Symposium on VLSI Technology, pp. 1-2. IEEE, 2021.
[6] Phadke, O., Aabrar, K. A., Luo, Y. C., Kirtania, S. G., Khan, A. I., Datta, S., & Yu, S. “Low-Frequency Noise Characteristics of Ferroelectric Field-Effect Transistors.” IEEE International Reliability Physics Symposium (IRPS) (pp. 1-4). IEEE 2023.