|
Phone 765-746-9154 LinkedIn www.linkedin.com/in/sunbindeng |
Research Interests
His current research is mainly on back-end-of-line (BEOL) compatible oxide transistors for monolithic 3D integrated circuits and advanced computing hardware.
Postdoctoral Researcher
Bio
| Sunbin Deng obtained his B.S. degree in Optical Information Science and Technology from Huazhong University of Science and Technology (HUST), Wuhan, China, in 2014 and his Ph.D. degree in Electronic and Computer Engineering from the Hong Kong University of Science and Technology (HKUST), Hong Kong SAR, in 2020. From 2021 to 2022, he was a Postdoctoral Researcher in cooperation at Purdue University. Afterward, he joined the STaR lab at Georgia Institute of Technology and presently works with Prof. Suman Datta as a Postdoctoral Fellow. |
Selected Publications
[1] Deng, Sunbin, et al. “BEOL Compatible Oxide Power Transistors for On-Chip Voltage Conversion in Heterogenous 3D (H3D) Integrated Circuits.” 2023 International Electron Devices Meeting (IEDM). IEEE, 2023.
[2] Deng, Sunbin, et al. “Selective area doping for Mott neuromorphic electronics.” Science Advances 9.11 (2023): eade4838.
[3] Deng, Sunbin, et al. “Hydrogenated VO2 Bits for Probabilistic Computing.” IEEE Electron Device Letters (2023).
[4] Deng, Sunbin, et al. “Thermal budget reduction in metal oxide thin-film transistors via planarization process.” IEEE Electron Device Letters 42.2 (2020): 180-183.
[5] Deng, Sunbin, et al. “A cost‐effective fluorination method for enhancing the performance of metal oxide thin‐film transistors.” Journal of the Society for Information Display 29.5 (2021): 318-327.